Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs.

The role of EL2 in the infrared transmission images of defects in semi-insulating GaAs

725 Abstract—Infrared transmission images from GaAs semi insulating wafers were considered for years as directly related to the quantum absorption by electrons on fundamental states of deep centers, especially EL2. The satisfying correspondence of these images with the dislocations revealed by etching or X ray topography or infrared tomography led to the opinion that a strong concentration of E...

Optical Properties of As-Antisite and EL 2 Defects in GaAs

This Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions of the As-antisite defect. The analysis of the absorption and concentration data implies that the ...

Electron emission from deep level defects EL2 and EL6 in semi- insulating GaAs observed by positron drift velocity transient measurements

EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy

Relation between the metastability of EL2 and the photosensitivity of local vibrational modes in semi-insulating GaAs.

Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a number of photosensitive centers in semi-insulating GaAs. They include (OVA, ) center which has three modes at 730 cm ' ( A), 715 cm ' (8), and 714 cm ' (C), respectively, a suggested NH center related to a line at 983 cm ' (X& ), and centers related to hydrogen, such as (H-O) or (H-N) bonds, corresp...